Ultrasensitive Near‐Infrared MoTe₂ Photodetectors with Monolithically Integrated Fresnel Zone Plate Metalens

Abstract Atomic layers of group‐VI 2D transition metal dichalcogenides (TMDCs) with substantial materials system and unique physicochemical properties have exhibited excellent performances in electronics optoelectronics. However, photodetectors based on TMDCs suffer from poor sensitivity optical absorption due to the weak phonon conversion efficiency their atomically thin feature. Here, taking advantages miniaturization integrability, all‐dielectric TiO 2 metalenses are designed Fresnel diffraction effect integrated molybdenum ditelluride (MoTe ) photodetectors. Owing enhancement photon utilization efficiency, corresponding devices exhibit a high responsivity 135.0 A W –1 , an external quantum 202.0%, specific detectivity ≈4.05 × 10 12 Jones. These results indicate that optoelectrical can be significantly optimized by integration metalens will accelerate evolution optoelectronics fields.